Author(s): Aziz Taner Astarlıoğlu; Nursev Erdoğan; Cansu Emir; Emre Coşkun; Raşit Turan;   

    |     ISSN: 3005-2092  

This work was partially supported by Scientific and Technological Research Council of Turkey (TUBITAK) under contract numbers of 5189901 and 20AG001. The authors are thankful for the collaboration between Turkish Aerospace and Bilkent University – UNAM. The authors are indebted to Dr. H. Volkan Demir, Dr. Alpan Bek and Gence Bektaş for their critical scientific recommendations.

Citation:

ABSTRACT

Camouflage materials and technologies play a crucial role in stealth technologies. Shielding thermal radiation and millimetre radiofrequency (RF) waves are significant in object detection and electromagnetic interference shielding. Black silicon is being utilized to meet the requirements in infrared and RF regimes using texture type and dopant concentration, respectively. In this work, silicon nanowires with the same texture type and different electrical conductivity are fabricated and characterized. First, we investigated the effect of silicon nanowires in the infrared (IR) band. The average transmission of the textured silicon structures is 24% lower than the unprocessed samples in 8 – 14 μm. Structures with the same texture type but different electrical conductivity were also studied. The studies demonstrate that fabricated structures show a comparable transmission in the 8 – 14 μm, while their electromagnetic interference shielding performance in 8 – 12 GHz differs by about 15%.

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